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Cited 181 time in webofscience Cited 184 time in scopus
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Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

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dc.contributor.authorPark, SY-
dc.contributor.authorKim, BJ-
dc.contributor.authorKim, K-
dc.contributor.authorKang, MS-
dc.contributor.authorLim, KH-
dc.contributor.authorIl Lee, T-
dc.contributor.authorMyoung, JM-
dc.contributor.authorBaik, HK-
dc.contributor.authorCho, JH-
dc.contributor.authorKim, YS-
dc.date.available2018-05-10T05:27:43Z-
dc.date.created2018-04-18-
dc.date.issued2012-02-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/12531-
dc.description.abstractTransfer characteristics of ZnO thin-film transistors (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high-performance and solution-processed ZnO TFTs with a low processing temperature (similar to 300 degrees C), which is applicable to flexible plastic substrates.-
dc.language영어-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.relation.isPartOfADVANCED MATERIALS-
dc.titleLow-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201103173-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.24, pp.834 - +-
dc.description.journalClass1-
dc.identifier.wosid000299693000022-
dc.identifier.scopusid2-s2.0-84863011813-
dc.citation.endPage+-
dc.citation.startPage834-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume24-
dc.contributor.affiliatedAuthorKang, MS-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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