Enhanced electrical stability of organic thin-film transistors with polymer semiconductor-insulator blended active layers
DC Field | Value | Language |
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dc.contributor.author | Lee, J | - |
dc.contributor.author | Jung, JY | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Kim, JY | - |
dc.contributor.author | Lee, BL | - |
dc.contributor.author | Park, JI | - |
dc.contributor.author | Chung, JW | - |
dc.contributor.author | Park, JS | - |
dc.contributor.author | Koo, B | - |
dc.contributor.author | Jin, YW | - |
dc.contributor.author | Lee, S | - |
dc.date.available | 2018-05-10T05:28:48Z | - |
dc.date.created | 2018-04-18 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/12565 | - |
dc.description.abstract | We report on an enhanced electrical stability of organic thin-film transistors (OTFTs), where an organic semiconductor (poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12)) and a polymer insulator (poly(methyl methacrylate) (PMMA)) blended film were used as the active layer, in comparison with a single PQTBTz-C12 OTFT. While both devices exhibit similar electrical performance in terms of mobility and ON/OFF ratios, the blended device is less susceptible to OFF-bias stress. It is suggested that the carboxyl groups of PMMA in the blend may act as suppressors with regards to hole accumulation in the channel, and thus, the PQTBTz-C12/PMMA blend based OTFTs exhibit delayed threshold voltage shifts under OFF-bias stress. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688177] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Enhanced electrical stability of organic thin-film transistors with polymer semiconductor-insulator blended active layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3688177 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000300711200056 | - |
dc.identifier.scopusid | 2-s2.0-84863258886 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | Kim, DH | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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