Gallium nitride nanowire based nanogenerators and light-emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강문성 | - |
dc.date.available | 2018-05-10T05:33:28Z | - |
dc.date.created | 2018-04-18 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/12606 | - |
dc.description.abstract | Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.relation.isPartOf | ACS Nano | - |
dc.title | Gallium nitride nanowire based nanogenerators and light-emitting diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/nn301814w | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS Nano, v.6, no.6, pp.5687 - 5692 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000305661300126 | - |
dc.identifier.scopusid | 2-s2.0-84862897575 | - |
dc.citation.endPage | 5692 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 5687 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 6 | - |
dc.contributor.affiliatedAuthor | 강문성 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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