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X-BAND CMOS POWER AMPLIFIER USING MODE-LOCKING METHOD FOR SENSOR APPLICATIONS
- Issue Date
- 2012
- Publisher
- TAYLOR & FRANCIS LTD
- Citation
- JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, v.26, no.5-6, pp.633 - 640
- Journal Title
- JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS
- Volume
- 26
- Number
- 5-6
- Start Page
- 633
- End Page
- 640
- ISSN
- 0920-5071
- Abstract
- An X-band CMOS power amplifier using a mode-locking method for sensor applications is designed with a TSMC 0.13-mu m RF CMOS process. The cascode structure is adapted to remove the reliability problems between the drain and gate voltages of the NMOS. Additionally, the mode-locking method is used to improve the efficiency and gain of the amplifier. We proposed the method to adapt the mode-locking topology to the cascode structure. The measured power added efficiency is 27%, while the saturated output power is 14 dBm at an operation frequency of 8.9GHz. The designed chip size is 700 by 550 mu m(2).
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Related Researcher
- Park, Chang kun
- College of Information Technology (Department of Electronic Engineering)