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Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes

Authors
Lee, Seoung-KiKim, Beom JoonJang, HoukYoon, Sung CheolLee, ChangjinHong, Byung HeeRogers, John A.Cho, Jeong HoAhn, Jong-Hyun
Issue Date
Nov-2011
Publisher
AMER CHEMICAL SOC
Keywords
Graphene transistor; stretchable devices; ion gel gate dielectric; printing process; low-voltage operation
Citation
NANO LETTERS, v.11, no.11, pp.4642 - 4646
Journal Title
NANO LETTERS
Volume
11
Number
11
Start Page
4642
End Page
4646
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/13547
DOI
10.1021/nl202134z
ISSN
1530-6984
Abstract
With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 +/- 136 and 422 +/- 52 cm(2)/(Vs), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.
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College of Engineering > Department of Organic Materials and Fiber Engineering > 1. Journal Articles

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