High-Performance Stable n-Type Indenofluorenedione Field-Effect Transistors
- Authors
- Park, Young-Il; Lee, Joong Suk; Kim, Beom Joon; Kim, Beomjin; Lee, Jaehyun; Kim, Do Hwan; Oh, Se-Young; Cho, Jeong Ho; Park, Jong-Wook
- Issue Date
- 13-Sep-2011
- Publisher
- AMER CHEMICAL SOC
- Keywords
- indenofluorenedione; n-type field-effect transistors (FETs); fluorine substituent; electrical stability; environmental stability
- Citation
- CHEMISTRY OF MATERIALS, v.23, no.17, pp.4038 - 4044
- Journal Title
- CHEMISTRY OF MATERIALS
- Volume
- 23
- Number
- 17
- Start Page
- 4038
- End Page
- 4044
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/13572
- DOI
- 10.1021/cm2016824
- ISSN
- 0897-4756
- Abstract
- We developed high-performance stable n-type organic field-effect transistors (OFETs) using indenofluorenediones with different numbers of fluorine substituents (MonoF-IF-dione, DiF-IF-dione, and TriF-IF-dione). Top-contact OFETs were fabricated via the vacuum deposition of indenofluorenediones as the semiconducting channel material on polystyrene-treated SiO(2)/Si substrates. TriF-IF-dione FETs with Au source/drain contacts exhibited good device performances, with a field-effect mobility of 0.16 cm(2)/(V s), an on/off current ratio of 10(6), and a threshold voltage of 9.2 V. We found that the electrical stability for OFETs based on indenofluorenedione improved with the number of fluorine substituents, which was attributed to higher activation energies for charge trap creation. Moreover, the TriF-IF-dione FETs yielded excellent environmental stability properties, because the LUMO energy levels were relatively low, compared with those of the MonoF-IF-dione FETs.
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Collections - College of Engineering > Department of Organic Materials and Fiber Engineering > 1. Journal Articles
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