Multiferroic control of magneto-current through a resonant tunneling diode
- Authors
- Kim, Heesang; Kim, Nammee
- Issue Date
- 15-Mar-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.109, no.6
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 109
- Number
- 6
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/13703
- DOI
- 10.1063/1.3561485
- ISSN
- 0021-8979
- Abstract
- We study the resonant tunneling magneto-resistance (TMR) of a multiferroic resonant tunneling diode, which is hybridized of ferroelectric double barriers and a ferromagnetic quantum well. Using the nonequilibrium Green's function method we show that magneto-currents through the resonant tunneling diode and its current spin polarization can be manipulated by changing the relative direction of an applied magnetic field to the spontaneous magnetic field in the diluted magnetic semiconductor quantum well as well as by reversing dipole polarization directions in ferroelectric barriers. With these results, we propose a multiferroic spin device to control the amount of current and spin polarization of current through it. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3561485]
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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