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Multiferroic control of magneto-current through a resonant tunneling diode

Authors
Kim, HeesangKim, Nammee
Issue Date
15-Mar-2011
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.109, no.6
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
109
Number
6
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/13703
DOI
10.1063/1.3561485
ISSN
0021-8979
Abstract
We study the resonant tunneling magneto-resistance (TMR) of a multiferroic resonant tunneling diode, which is hybridized of ferroelectric double barriers and a ferromagnetic quantum well. Using the nonequilibrium Green's function method we show that magneto-currents through the resonant tunneling diode and its current spin polarization can be manipulated by changing the relative direction of an applied magnetic field to the spontaneous magnetic field in the diluted magnetic semiconductor quantum well as well as by reversing dipole polarization directions in ferroelectric barriers. With these results, we propose a multiferroic spin device to control the amount of current and spin polarization of current through it. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3561485]
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