Low-voltage pentacene field-effect transistors based on P(S-r-BCB-r-MMA) gate dielectrics
- Authors
- Koo, S.H.; Russell, T.P.; Hawker, C.J.; Ryu, D.Y.; Lee, H.S.; Cho, J.H.
- Issue Date
- 2011
- Keywords
- Low voltage operation; Organic field-effect transistors; P(S-r-BCB-r-MMA); Pentacene; Stability
- Citation
- Applied Chemistry for Engineering, v.22, no.5, pp.551 - 554
- Journal Title
- Applied Chemistry for Engineering
- Volume
- 22
- Number
- 5
- Start Page
- 551
- End Page
- 554
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/14504
- ISSN
- 1225-0112
- Abstract
- One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of 0.25 cm 2/Vs, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ~10 5. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.
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Collections - College of Engineering > Department of Organic Materials and Fiber Engineering > 1. Journal Articles
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