Nanostructural analysis of GaN tripods and hexapods grown on c-plane sapphire

Abstract

The crystallographic and structural characteristics of GaN tripods and hexapods grown on c-plane sapphire substrates were investigated using synchrotron X-ray scattering and microscopic analysis. The core structure of a GaN hexapod is revealed to be in the zincblende phase with an inversion domain, and a refined crystallographic analysis of tripods and hexapods with synchrotron X-ray scattering shows the existence of the zincblende phase in wurtzite-based protruding nanorods. The atomistic model combined with this crystallographic analysis reveals that the core size of a hexapod is much smaller than the diameters of the protruding nanorods. This refined structural analysis can be utilized in tailoring the opto-electronic characteristics of GaN multipods.