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CMOS class-E power amplifier (1.8-GHz) with an additional thin-film technology
- Issue Date
- Nov-2010
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- IET CIRCUITS DEVICES & SYSTEMS, v.4, no.6, pp.479 - 485
- Journal Title
- IET CIRCUITS DEVICES & SYSTEMS
- Volume
- 4
- Number
- 6
- Start Page
- 479
- End Page
- 485
- ISSN
- 1751-858X
- Abstract
- A 1.8-GHz power amplifier is implemented using the 0.18-mu m Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. An additional thin-film technology on a separate substrate is used to design the output matching network for high efficiency. To minimise the number of bond-wires, a single differential power stage is used. The output matching network was completed with the proposed load impedance transformer and an Metal Insulator Metal (MIM) capacitor using additional thin-film technology. The amplifier achieved a drain efficiency of 50.5% at a maximum output power of 31.6 dBm at 1.81 GHz.
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Related Researcher
- Park, Chang kun
- College of Information Technology (Department of Electronic Engineering)