Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy
- Authors
- Lee, Sanghwa; Oh, Taegeon; Shin, Boa; Kim, Chinkyo; Lee, Dong Ryeol; Lee, Hyun-Hwi
- Issue Date
- 1-Jul-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Nucleation; X-ray diffraction; Hydride vapor phase epitaxy; Nitrides
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.312, no.14, pp.2038 - 2043
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 312
- Number
- 14
- Start Page
- 2038
- End Page
- 2043
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/14707
- DOI
- 10.1016/j.jcrysgro.2010.03.026
- ISSN
- 0022-0248
- Abstract
- GaN nanorods were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy, and the crystallographic characteristics associated with their preferred growth directions were investigated by utilizing synchrotron X-ray reciprocal space mapping in a grazing incidence geometry and scanning electron microscopy. Crystallographic analysis reveals that the nanorods containing both wurtzite and zinc blende phase tend to have narrower distribution of the preferred growth directions than those containing only wurtzite phase. This tendency is partly attributed to the subtle interplay between polytypism and the preferred growth directions of GaN nanorods. (C) 2010 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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