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High-mobility low-temperature ZnO transistors with low-voltage operation
- Issue Date
- 10-May-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- carrier mobility; dielectric materials; flexible electronics; gels; II-VI semiconductors; semiconductor thin films; sintering; sol-gel processing; thin film transistors; zinc compounds
- Citation
- APPLIED PHYSICS LETTERS, v.96, no.19
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 96
- Number
- 19
- ISSN
- 0003-6951
- Abstract
- Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm(2)/V s, ON/OFF current ratios were 10(5), regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428357]
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