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Electronic Structure of the NiOx Film Fabricated by Using a Thermal Oxidation Technique
- Authors
- Seo, Y. K.; Lee, D. J.; Lee, Y. S.; Choi, W. S.; Kim, D. -W.
- Issue Date
- Jul-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ReBAM; NiO; Electronic structure; Optical spectroscopy
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.129 - 133
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 129
- End Page
- 133
- ISSN
- 0374-4884
- Abstract
- We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.
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Related Researcher
- Lee, Yun Sang
- College of Natural Sciences (Department of Physics)