Spin selector by ferroelectric triple barrier resonant tunneling diode
- Authors
- Li, M. K.; Kang, T. W.; Kim, N. M.
- Issue Date
- 23-Mar-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- charge injection; current fluctuations; ferroelectric devices; ferroelectric materials; Green' s function methods; magnetoelectronics; quantum well devices; resonant tunnelling diodes; semiconductor quantum wells; semimagnetic semiconductors; spin polarised transport
- Citation
- APPLIED PHYSICS LETTERS, v.94, no.12
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 94
- Number
- 12
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/15860
- DOI
- 10.1063/1.3110048
- ISSN
- 0003-6951
- Abstract
- We propose a spin selector of ferroelectric triple barrier resonant tunneling diode with diluted magnetic quantum wells. Spin transport properties of this spin selector are investigated by nonequilibrium Green's function method. Results show the oscillation of spin polarization of current occurred at low bias voltage due to a transmission resonant peak splitting into subpeaks. By reversing the electric dipole direction of ferroelectric barriers, the spin direction of polarized current is reversed simultaneously at a fixed bias voltage. This implies that the spin direction of injected current can be selected through this spin selector without changing the applied magnetic field.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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