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Spin selector by ferroelectric triple barrier resonant tunneling diode

Authors
Li, M. K.Kang, T. W.Kim, N. M.
Issue Date
23-Mar-2009
Publisher
AMER INST PHYSICS
Keywords
charge injection; current fluctuations; ferroelectric devices; ferroelectric materials; Green' s function methods; magnetoelectronics; quantum well devices; resonant tunnelling diodes; semiconductor quantum wells; semimagnetic semiconductors; spin polarised transport
Citation
APPLIED PHYSICS LETTERS, v.94, no.12
Journal Title
APPLIED PHYSICS LETTERS
Volume
94
Number
12
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/15860
DOI
10.1063/1.3110048
ISSN
0003-6951
Abstract
We propose a spin selector of ferroelectric triple barrier resonant tunneling diode with diluted magnetic quantum wells. Spin transport properties of this spin selector are investigated by nonequilibrium Green's function method. Results show the oscillation of spin polarization of current occurred at low bias voltage due to a transmission resonant peak splitting into subpeaks. By reversing the electric dipole direction of ferroelectric barriers, the spin direction of polarized current is reversed simultaneously at a fixed bias voltage. This implies that the spin direction of injected current can be selected through this spin selector without changing the applied magnetic field.
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