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Magnetic and thermal properties of MoN underlayer for spin valves depending on nitrogen concentration

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dc.contributor.authorKim, J.-
dc.contributor.authorChoi, Y.-
dc.contributor.authorJo, S.-
dc.contributor.authorKim, S. Y.-
dc.contributor.authorLee, C. W.-
dc.date.available2018-05-10T17:08:51Z-
dc.date.created2018-04-17-
dc.date.issued2006-10-
dc.identifier.issn0018-9464-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/18596-
dc.description.abstractWe incorporated nitrogen in the Mo underlayer and investigated the effect of nitrogen concentration on the magnetic properties and annealing behavior of the spin valve devices. The spin valve structure was Si/SiO2/Mo(MoN)(35 angstrom)/NiFe(21 angstrom)/CoFe(28 angstrom)/Cu(22 A)/CoFe(18 angstrom)/IrMn(65 angstrom)/Ta(25 angstrom). It is concluded that MoN underlayer is magnetically as good as Ta underlayer for N-2 gas flow rate of less than 6 sccm.-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.relation.isPartOfIEEE TRANSACTIONS ON MAGNETICS-
dc.subjectSENSORS-
dc.titleMagnetic and thermal properties of MoN underlayer for spin valves depending on nitrogen concentration-
dc.typeArticle-
dc.identifier.doi10.1109/TMAG.2006.879148-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.3267 - 3269-
dc.description.journalClass1-
dc.identifier.wosid000240888700333-
dc.identifier.scopusid2-s2.0-33846641559-
dc.citation.endPage3269-
dc.citation.number10-
dc.citation.startPage3267-
dc.citation.titleIEEE TRANSACTIONS ON MAGNETICS-
dc.citation.volume42-
dc.contributor.affiliatedAuthorJo, S.-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordAuthordiffusion barrier-
dc.subject.keywordAuthorGMR-
dc.subject.keywordAuthorIrMn-
dc.subject.keywordAuthorMoN films-
dc.subject.keywordAuthorspin valve-
dc.subject.keywordAuthorunderlayer-
dc.subject.keywordPlusSENSORS-
dc.description.journalRegisteredClassscopus-
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