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Controllable spin polarization in a DMS quantum dot

Authors
Kim, NKang, TWKim, H
Issue Date
30-Nov-2005
Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
Keywords
diluted magnetic semiconductor; quantum dot; spin polarization; spin polarized single electron transistor; spin device application
Citation
MODERN PHYSICS LETTERS B, v.19, no.27, pp.1419 - 1427
Journal Title
MODERN PHYSICS LETTERS B
Volume
19
Number
27
Start Page
1419
End Page
1427
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/19318
DOI
10.1142/S0217984905009353
ISSN
0217-9849
Abstract
The effects of electro-magnetic confining potentials and the s-d exchange interaction between substituted Mn ions and carriers on the spin polarization of carriers in an diluted magnetic semiconductor quantum dot are investigated within the framework of the effective-mass theory. The energy eigenvalues and wavefunctions of a single electron in the presence of an external magnetic field are studied by solving the one particle Schrodinger equation including the conventional Zeeman effect, the s-d exchange interaction and the electric confining potential which describes the dot. The eigenenergy structure for low lying states is strongly dependant on the relative sizes of the s-d exchange interactions and the conventional Zeeman energy splitting. When the spin splitting exceeds the cyclotron energy splitting, the Landau level overlappings occur so that the spin polarization of carriers is induced in low lying energy states. This spin polarization of carriers in the diluted magnetic semiconductor quantum dot can be controlled by changing the electro-magnetic confining potentials.
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