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HFCVD법에 의한 CH3OH/H2O 다이아몬드 박막 제조에 수소가 미치는 영향Effect of H2 on The Diamond Film Growth Mechanism by HFCVD Method Using CH3OH/H2O
- Other Titles
- Effect of H2 on The Diamond Film Growth Mechanism by HFCVD Method Using CH3OH/H2O
- Issue Date
- Dec-2004
- Publisher
- 한국재료학회
- Keywords
- HFCVD method; diamond film; growth mechanism; CH3OH/H2O; excess H2; CH4/H2; HFCVD method; diamond film; growth mechanism; CH3OH/H2O; excess H2; CH4/H2
- Citation
- 한국재료학회지, v.14, no.12, pp.835 - 839
- Journal Title
- 한국재료학회지
- Volume
- 14
- Number
- 12
- Start Page
- 835
- End Page
- 839
- ISSN
- 1225-0562
- Abstract
- The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the CH3OH/H2O mixtured gas with excess H2 gas . The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the CH3OH/H2O with the CH4/H2. Pressures in the range of 1.1～290 ×102 Pa were applied and using 3.4～4.4 KW power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy. The H ion was etching the graphite and restrained from sp3 to sp2. But excess H2 gas was not helped diamond deposit using CH3OH/H2O mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using CH3OH/H2O was different from CH4/H2.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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