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A new weight redistribution technique for electron-electron scattering in the MC simulation

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dc.contributor.authorKim, J.-
dc.contributor.authorShin, H.-
dc.contributor.authorLee, C.-
dc.contributor.authorPark, Y.J.-
dc.contributor.authorMin, H.S.-
dc.date.available2018-05-10T18:26:48Z-
dc.date.created2018-04-17-
dc.date.issued2004-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/20581-
dc.description.abstractA novel technique for the weight redistribution after the electron-electron scattering between weighted electrons in the weighted ensemble Monte Carlo simulation is proposed. By generating an additional electron after each electron-electron collision the conservation of energy, momentum and charge is guaranteed, which has not been possible in the previously reported methods. The proposed technique has been successfully applied to an ideal gas simulation. Based on the new model, the tail carrier behavior due to the electron-electron scattering in the n+ -doped silicon is studied. © 2004 IEEE.-
dc.relation.isPartOfIEEE Transactions on Electron Devices-
dc.subjectBaby electron addition technique-
dc.subjectHot carrier transport-
dc.subjectRelaxation time-
dc.subjectSilicon energy bandgap-
dc.subjectWeight redistribution technique-
dc.subjectComputer simulation-
dc.subjectElectron scattering-
dc.subjectElectron transport properties-
dc.subjectEnergy gap-
dc.subjectHot carriers-
dc.subjectMathematical models-
dc.subjectMonte Carlo methods-
dc.subjectRelaxation processes-
dc.subjectSemiconductor doping-
dc.subjectSemiconducting silicon-
dc.titleA new weight redistribution technique for electron-electron scattering in the MC simulation-
dc.typeArticle-
dc.identifier.doi10.1109/TED.2004.833969-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE Transactions on Electron Devices, v.51, no.9, pp.1448 - 1454-
dc.description.journalClass1-
dc.identifier.scopusid2-s2.0-4444246017-
dc.citation.endPage1454-
dc.citation.number9-
dc.citation.startPage1448-
dc.citation.titleIEEE Transactions on Electron Devices-
dc.citation.volume51-
dc.contributor.affiliatedAuthorLee, C.-
dc.type.docTypeArticle-
dc.description.journalRegisteredClassscopus-
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