A new weight redistribution technique for electron-electron scattering in the MC simulation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Shin, H. | - |
dc.contributor.author | Lee, C. | - |
dc.contributor.author | Park, Y.J. | - |
dc.contributor.author | Min, H.S. | - |
dc.date.available | 2018-05-10T18:26:48Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/20581 | - |
dc.description.abstract | A novel technique for the weight redistribution after the electron-electron scattering between weighted electrons in the weighted ensemble Monte Carlo simulation is proposed. By generating an additional electron after each electron-electron collision the conservation of energy, momentum and charge is guaranteed, which has not been possible in the previously reported methods. The proposed technique has been successfully applied to an ideal gas simulation. Based on the new model, the tail carrier behavior due to the electron-electron scattering in the n+ -doped silicon is studied. © 2004 IEEE. | - |
dc.relation.isPartOf | IEEE Transactions on Electron Devices | - |
dc.subject | Baby electron addition technique | - |
dc.subject | Hot carrier transport | - |
dc.subject | Relaxation time | - |
dc.subject | Silicon energy bandgap | - |
dc.subject | Weight redistribution technique | - |
dc.subject | Computer simulation | - |
dc.subject | Electron scattering | - |
dc.subject | Electron transport properties | - |
dc.subject | Energy gap | - |
dc.subject | Hot carriers | - |
dc.subject | Mathematical models | - |
dc.subject | Monte Carlo methods | - |
dc.subject | Relaxation processes | - |
dc.subject | Semiconductor doping | - |
dc.subject | Semiconducting silicon | - |
dc.title | A new weight redistribution technique for electron-electron scattering in the MC simulation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2004.833969 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.51, no.9, pp.1448 - 1454 | - |
dc.description.journalClass | 1 | - |
dc.identifier.scopusid | 2-s2.0-4444246017 | - |
dc.citation.endPage | 1454 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1448 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Lee, C. | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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