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A Fully-MOSFET Bandgap Reference Circuit Using MOS PTAT Characteristic
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 위재경 | - |
| dc.date.available | 2018-06-12T10:00:32Z | - |
| dc.date.created | 2018-06-11 | - |
| dc.date.issued | 2007-05 | - |
| dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/29470 | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | A Fully-MOSFET Bandgap Reference Circuit Using MOS PTAT Characteristic | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | SOC 학술대회 | - |
| dc.description.journalClass | 2 | - |
| dc.citation.title | SOC 학술대회 | - |
| dc.contributor.affiliatedAuthor | 위재경 | - |
| dc.type.docType | Article; Proceedings Paper | - |
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