Working mechanism of iodide ions and its application to Cu microstructure control in through silicon via filling
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sung, M. | - |
dc.contributor.author | Kim, S.-H. | - |
dc.contributor.author | Lee, H.-J. | - |
dc.contributor.author | Lim, T. | - |
dc.contributor.author | Kim, J.J. | - |
dc.date.available | 2019-03-13T01:11:45Z | - |
dc.date.created | 2018-12-03 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 0013-4686 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/30779 | - |
dc.description.abstract | Through silicon via (TSV) is one of the most important technologies in 3-dimensional wafer/chip stacking. However, there are some issues related to defect-free TSV filling and Cu pumping. In this study, a defect-free TSV filling was achieved using iodide ions. The working mechanism of iodide ions in TSV filling was systemically investigated by electrochemical measurements; It was found that the formation of CuI on the electrode surface is a key process for inhibiting Cu ion reduction. This inhibition effect of iodide ions enables defect-free TSV filling. Furthermore, the study of microstructure of the filled Cu revealed that the electrochemical reduction of CuI during the TSV filling forms small Cu grains in TSV. The small Cu grains cause Cu pumping in subsequent processes, which damages semiconductor devices. We achieved a defect-free TSV filling with enlarged Cu grains using a two-step filling method that effectively promotes the direct reduction of Cu ions rather than electrochemical reduction of CuI. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier Ltd | - |
dc.relation.isPartOf | Electrochimica Acta | - |
dc.subject | Copper | - |
dc.subject | Electrodes | - |
dc.subject | Electrolytic reduction | - |
dc.subject | Electronics packaging | - |
dc.subject | Filling | - |
dc.subject | Heavy ions | - |
dc.subject | Integrated circuit interconnects | - |
dc.subject | Integrated circuit manufacture | - |
dc.subject | Metal drawing | - |
dc.subject | Microstructure | - |
dc.subject | Semiconductor devices | - |
dc.subject | Silicon wafers | - |
dc.subject | Copper electrodeposition | - |
dc.subject | Electrochemical measurements | - |
dc.subject | Electrochemical reductions | - |
dc.subject | Grain size control | - |
dc.subject | Iodide | - |
dc.subject | Microstructure control | - |
dc.subject | Through-Silicon-Via | - |
dc.subject | Through-Silicon-Via (TSV) | - |
dc.subject | Three dimensional integrated circuits | - |
dc.title | Working mechanism of iodide ions and its application to Cu microstructure control in through silicon via filling | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.electacta.2018.10.141 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Electrochimica Acta, v.295, pp.224 - 229 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000454249800028 | - |
dc.identifier.scopusid | 2-s2.0-85056247719 | - |
dc.citation.endPage | 229 | - |
dc.citation.startPage | 224 | - |
dc.citation.title | Electrochimica Acta | - |
dc.citation.volume | 295 | - |
dc.contributor.affiliatedAuthor | Lim, T. | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Copper electrodeposition | - |
dc.subject.keywordAuthor | Cu protrusion | - |
dc.subject.keywordAuthor | Grain size control | - |
dc.subject.keywordAuthor | Iodide | - |
dc.subject.keywordAuthor | Through silicon via (TSV) | - |
dc.subject.keywordPlus | Copper | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Electrolytic reduction | - |
dc.subject.keywordPlus | Electronics packaging | - |
dc.subject.keywordPlus | Filling | - |
dc.subject.keywordPlus | Heavy ions | - |
dc.subject.keywordPlus | Integrated circuit interconnects | - |
dc.subject.keywordPlus | Integrated circuit manufacture | - |
dc.subject.keywordPlus | Metal drawing | - |
dc.subject.keywordPlus | Microstructure | - |
dc.subject.keywordPlus | Semiconductor devices | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.subject.keywordPlus | Copper electrodeposition | - |
dc.subject.keywordPlus | Electrochemical measurements | - |
dc.subject.keywordPlus | Electrochemical reductions | - |
dc.subject.keywordPlus | Grain size control | - |
dc.subject.keywordPlus | Iodide | - |
dc.subject.keywordPlus | Microstructure control | - |
dc.subject.keywordPlus | Through-Silicon-Via | - |
dc.subject.keywordPlus | Through-Silicon-Via (TSV) | - |
dc.subject.keywordPlus | Three dimensional integrated circuits | - |
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