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X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

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dc.contributor.authorSong, K.M.-
dc.contributor.authorKim, D.-O.-
dc.contributor.authorKim, J.-S.-
dc.contributor.authorLee, D.R.-
dc.contributor.authorChoi, J.W.-
dc.date.available2019-03-13T01:35:04Z-
dc.date.created2018-09-12-
dc.date.issued2018-05-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/31312-
dc.description.abstractThe electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of −12.7 fJ/Vm and −8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface. © 2018 Korean Physical Society-
dc.language영어-
dc.language.isoen-
dc.publisherElsevier B.V.-
dc.relation.isPartOfCurrent Applied Physics-
dc.subjectCobalt compounds-
dc.subjectElectric fields-
dc.subjectInterface states-
dc.subjectMagnetism-
dc.subjectOptical anisotropy-
dc.subjectOptical Kerr effect-
dc.subjectSpintronics-
dc.subjectX ray scattering-
dc.subjectApplied voltages-
dc.subjectElectric field induced-
dc.subjectElectric-field control-
dc.subjectInterfacial magnetic anisotropies-
dc.subjectMagnetic components-
dc.subjectMagneto-optical Kerr effects-
dc.subjectPerpendicular magnetic anisotropy-
dc.subjectX-ray resonant magnetic scattering-
dc.subjectMagnetic anisotropy-
dc.titleX-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces-
dc.typeArticle-
dc.identifier.doi10.1016/j.cap.2018.05.003-
dc.type.rimsART-
dc.identifier.bibliographicCitationCurrent Applied Physics, v.18, no.11, pp.1212 - 1217-
dc.identifier.kciidART002406091-
dc.description.journalClass1-
dc.identifier.wosid000446676900009-
dc.identifier.scopusid2-s2.0-85046833581-
dc.citation.endPage1217-
dc.citation.number11-
dc.citation.startPage1212-
dc.citation.titleCurrent Applied Physics-
dc.citation.volume18-
dc.contributor.affiliatedAuthorKim, D.-O.-
dc.contributor.affiliatedAuthorLee, D.R.-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.subject.keywordAuthorSpintronics-
dc.subject.keywordAuthorMagnetic anisotropy-
dc.subject.keywordAuthorX-ray scattering-
dc.subject.keywordAuthorElectric field control of magnetism-
dc.subject.keywordPlusATOMIC LAYERS-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
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