Nonvolatile Electric Double-Layer Transistor Memory Devices Embedded with Au Nanoparticles
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Koo, Jaemok | - |
dc.contributor.author | Yang, Jeehye | - |
dc.contributor.author | Cho, Boeun | - |
dc.contributor.author | Jo, Hyunwoo | - |
dc.contributor.author | Lee, Keun Hyung | - |
dc.contributor.author | Kang, Moon Sung | - |
dc.date.available | 2019-03-13T01:52:25Z | - |
dc.date.created | 2018-09-12 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/31928 | - |
dc.description.abstract | We present nonvolatile transistor memory devices that rely on the formation of electric double layer (EDL) at the semiconductor-electrolyte interface. The two critical functional components of the devices are the ion gel electrolyte and gold nanoparticles (NPs). The ion gel electrolyte contains ionic species for EDL formation that allow inducing charges in the semiconductor-electrolyte interface. The gold NPs inserted between the ion gel and the channel layer serve as trapping sites to the induced charges to store the electrical input signals. Two different types of gold NPs were used: one prepared using direct thermal evaporation and the other prepared using a colloidal process. The organic ligands attached onto the colloidal gold NPs prevented the escape of the trapped charges from the particles and thus enhanced the retention characteristics of the programmed/erased signals. The low-voltage-driven EDL formation resulted in a programmed/erased memory signal ratio larger than 10(3) from the nonvolatile indium-gallium-zinc oxide transistor memory devices at voltages below 10 V, which could be held for >10(5) s. The utility of the electrolytes to operate memory devices demonstrated herein should provide an alternative strategy to realize cheap, portable electronic devices powered with thin-film batteries. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | FLOATING-GATE | - |
dc.subject | VOLTAGE | - |
dc.subject | MOLECULES | - |
dc.subject | ARRAYS | - |
dc.subject | ZNO | - |
dc.title | Nonvolatile Electric Double-Layer Transistor Memory Devices Embedded with Au Nanoparticles | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.8b01902 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.11, pp.9563 - 9570 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000428356800043 | - |
dc.identifier.scopusid | 2-s2.0-85044316196 | - |
dc.citation.endPage | 9570 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 9563 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Kang, Moon Sung | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | nonvolatile transistor memory device | - |
dc.subject.keywordAuthor | low-voltage operation | - |
dc.subject.keywordAuthor | electric double layer | - |
dc.subject.keywordAuthor | ion gel | - |
dc.subject.keywordAuthor | Au nanoparticles | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | MOLECULES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | ZNO | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.