The Effects of Fluoropolymer Gate-Dielectric on the Air Stability of MoS2 Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Yoo, Geonwook | - |
dc.contributor.author | Ma, Jiyeon | - |
dc.date.available | 2019-03-13T01:53:15Z | - |
dc.date.created | 2018-09-12 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/32011 | - |
dc.description.abstract | We report the improved hysteresis and air stability of multilayer MoS2 FETs fabricated on a fluoropolymer CYTOP gate-dielectric layer. The fabricated devices, in comparison to the devices on a cross-linked Poly(4-vinylphenol) [PVP] layer, exhibit less hysteretic behavior in ambient as well as vacuum conditions and thus smaller hysteresis gap. Furthermore, the amount of threshold voltage shifts (Delta V-TH) over two months in the shelf is also reduced (0.6 +/- 1.2 V) compared to the devices on the PVP layer (-2.0 +/- 0.4 V). These improvements are attributed to less charge trapping effect by adsorbed oxygen and/or water molecules on the surface due to hydrophobic fluorine group, indicating the fluoropolymer gate-dielectric can be a good candidate for flexible low-power electronics with improved stability. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | SCIENCE OF ADVANCED MATERIALS | - |
dc.subject | ATOMIC LAYERS | - |
dc.subject | HYSTERESIS | - |
dc.subject | DEPOSITION | - |
dc.subject | AL2O3 | - |
dc.title | The Effects of Fluoropolymer Gate-Dielectric on the Air Stability of MoS2 Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/sam.2018.3221 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.10, no.2, pp.181 - 184 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000419976000004 | - |
dc.citation.endPage | 184 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 181 | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Yoo, Geonwook | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | Fluoropolymer | - |
dc.subject.keywordAuthor | Hysteresis | - |
dc.subject.keywordAuthor | Air Stability | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.description.journalRegisteredClass | scie | - |
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