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Advanced RF CMOS power amplifier with a monolithic high-Q transformer on a thick laminated organic layer
- Authors
- Kim, S.-R.; Park, C.; Yook, J.-M.
- Issue Date
- Aug-2017
- Publisher
- John Wiley and Sons Inc.
- Keywords
- CMOS PA; high-Q inductor; organic lamination; power amplifier; RF transformer
- Citation
- Microwave and Optical Technology Letters, v.59, no.8, pp.1829 - 1832
- Journal Title
- Microwave and Optical Technology Letters
- Volume
- 59
- Number
- 8
- Start Page
- 1829
- End Page
- 1832
- ISSN
- 0895-2477
- Abstract
- We propose a new transformer structure for output matching networks to improve the power-added efficiency (PAE) of CMOS power amplifiers (PAs). To minimize the effects of a lossy silicon substrate, the transformer is realized on a very thick organic layer which is formed by lamination process. The maximum available gain of the transformer is improved from ?1.23 to ?0.68 dB as the insulator thickness is changed from 3 to 60 ��m. As a result, the PAE of the proposed CMOS PA with the proposed monolithic high-Q transformer shows a maximum output power of 24.98 dBm with a 30.49% PAE at 2.4 GHz. ? 2017 Wiley Periodicals, Inc.
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Related Researcher
- Park, Chang kun
- College of Information Technology (Department of Electronic Engineering)