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A U-band VCO in 65nm CMOS with 0.44dBm output power

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dc.contributor.authorLee, J.-
dc.contributor.authorShin, S.-
dc.contributor.authorMoon, Y.-
dc.date.available2019-04-10T10:02:23Z-
dc.date.created2018-04-17-
dc.date.issued2015-
dc.identifier.isbn9781479951260-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/32610-
dc.description.abstractA high output power VCO (voltage controlled oscillator) in U-band is implemented using 65nm CMOS process. The proposed VCO uses MTM(meta-material) technique with transmission line to increase output voltage swing and overcome the limitation of the CMOS technologies. Two varactor banks widen frequency tuning range upto 5%. The VCO operates at 51.55∼54.18GHz and the measured phase noise is -100.67dBc/Hz at 10MHz offset. The chip area is 0.16×0.16mm2 and the output power is 0.44dBm. The power consumption is 33.6mW with 1.2V supply voltage. The measured FOM<inf>P</inf> is -181dBc/Hz. © 2014 IEEE.-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.isPartOfISOCC 2014 - International SoC Design Conference-
dc.titleA U-band VCO in 65nm CMOS with 0.44dBm output power-
dc.typeConference-
dc.identifier.doi10.1109/ISOCC.2014.7087574-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation11th International SoC Design Conference, ISOCC 2014, pp.86 - 87-
dc.description.journalClass2-
dc.identifier.scopusid2-s2.0-84929396463-
dc.citation.conferenceDate2014-11-03-
dc.citation.endPage87-
dc.citation.startPage86-
dc.citation.title11th International SoC Design Conference, ISOCC 2014-
dc.contributor.affiliatedAuthorMoon, Y.-
dc.type.docTypeConference Paper-
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