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Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Donghyuk | - |
| dc.contributor.author | Lee, Jaejin | - |
| dc.date.available | 2019-04-10T10:42:08Z | - |
| dc.date.created | 2018-04-17 | - |
| dc.date.issued | 2011-03 | - |
| dc.identifier.issn | 0018-9464 | - |
| dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/33124 | - |
| dc.description.abstract | Floating-gate coupling occurs due to voltage changes in neighboring floating-gates. Coupling noise is difficult to overcome because of its non-linear property. We propose a coupling canceller for cancelling the coupling effect in multi-level cell NAND flash memory, and compare its performance with threshold detection. Simulation results show that the proposed floating-gate coupling canceller is an effective scheme for suppressing coupling noise. | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON MAGNETICS | - |
| dc.title | Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash | - |
| dc.type | Conference | - |
| dc.identifier.doi | 10.1109/TMAG.2010.2101054 | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | , v.47, no.3, pp.624 - 628 | - |
| dc.description.journalClass | 2 | - |
| dc.identifier.wosid | 000287861800028 | - |
| dc.identifier.scopusid | 2-s2.0-79952136198 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.endPage | 628 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 624 | - |
| dc.citation.title | IEEE Transactions on Magnetics | - |
| dc.citation.volume | 47 | - |
| dc.contributor.affiliatedAuthor | Lee, Jaejin | - |
| dc.type.docType | Article; Proceedings Paper | - |
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Related Researcher
- Lee, Jae jin
- College of Information Technology (Major in Electronic Engineering)