In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition
DC Field | Value | Language |
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dc.contributor.author | Park, Yong Jun | - |
dc.contributor.author | Lee, Dong Ryeol | - |
dc.contributor.author | Lee, Hyun Hwi | - |
dc.contributor.author | Lee, Han-Bo-Ram | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | Park, Gye-Choon | - |
dc.contributor.author | Rhee, Shi-Woo | - |
dc.contributor.author | Baik, Sunggi | - |
dc.date.available | 2019-04-10T10:42:19Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/33129 | - |
dc.description.abstract | We report an atomic layer deposition chamber for in-situ synchrotron X-ray scattering study of thin film growth. The chamber was designed for combined synchrotron X-ray reflectivity and two-dimensional grazing-incidence X-ray diffraction measurement to do a in-situ monitoring of ALD growth. We demonstrate ruthenium thermal ALD growth for the performance of the chamber. 10, 20, 30, 50, 70, 100, 150 and 250-cycled states are measured by X-ray scattering methods during ALD growth process. Growth rate is calculated from thickness values and the surface roughness of each state is estimated by X-ray reflectivity analysis. The crystal structure of initial growth state is observed by Grazing-incidence X-ray diffraction. These results indicate that in-situ X-ray scattering method is a promising analysis technique to investigate the initial physical morphology of ALD films. | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.title | In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition | - |
dc.type | Conference | - |
dc.identifier.doi | 10.1166/jnn.2011.3399 | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | , v.11, no.2, pp.1577 - 1580 | - |
dc.description.journalClass | 2 | - |
dc.identifier.wosid | 000287167900123 | - |
dc.identifier.scopusid | 2-s2.0-84863012223 | - |
dc.citation.conferencePlace | US | - |
dc.citation.endPage | 1580 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1577 | - |
dc.citation.title | Journal of Nanoscience and Nanotechnology | - |
dc.citation.volume | 11 | - |
dc.contributor.affiliatedAuthor | Lee, Dong Ryeol | - |
dc.type.docType | Article; Proceedings Paper | - |
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