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Asymmetric Double-Gate β-Ga 2 O 3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices

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dc.contributor.authorMa, J.-
dc.contributor.authorCho, H.J.-
dc.contributor.authorHeo, J.-
dc.contributor.authorKim, S.-
dc.contributor.authorYoo, G.-
dc.date.available2019-04-19T02:30:02Z-
dc.date.created2019-04-19-
dc.date.issued2019-06-
dc.identifier.issn2199-160X-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/34338-
dc.description.abstractThe ultra-wide bandgap and cost-effective melt-growth of β-Ga 2 O 3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double-gate (ADG) β-Ga 2 O 3 nanomembrane field-effect transistor (FET) comprised of a bottom-gate (BG) metal-oxide field-effect transistor and a top-gate (TG) metal-semiconductor field-effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top-gate β-Ga 2 O 3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off-state breakdown measurement. These properties are further enhanced by double-gate operation, and superior device performance is demonstrated; positive-shifted threshold voltage and reduced subthreshold slope enable the asymmetric double-gate β-Ga 2 O 3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high-frequency operation. These results show the great potential of asymmetric double-gate β-Ga 2 O 3 FETs for energy-efficient high-voltage and -frequency devices with optimal material and structure co-designs. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.language영어-
dc.language.isoen-
dc.publisherBlackwell Publishing Ltd-
dc.relation.isPartOfAdvanced Electronic Materials-
dc.titleAsymmetric Double-Gate β-Ga 2 O 3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices-
dc.typeArticle-
dc.identifier.doi10.1002/aelm.201800938-
dc.type.rimsART-
dc.identifier.bibliographicCitationAdvanced Electronic Materials, v.5, no.6, pp.1800938-
dc.description.journalClass1-
dc.identifier.wosid000471049100020-
dc.identifier.scopusid2-s2.0-85063728759-
dc.citation.number6-
dc.citation.startPage1800938-
dc.citation.titleAdvanced Electronic Materials-
dc.citation.volume5-
dc.contributor.affiliatedAuthorYoo, G.-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.subject.keywordAuthorasymmetric-gate-
dc.subject.keywordAuthorbeta-gallium oxide-
dc.subject.keywordAuthormetal-oxide field-effect transistor-
dc.subject.keywordAuthormetal-semiconductor field-effect transistor-
dc.subject.keywordPlusCost effectiveness-
dc.subject.keywordPlusEnergy efficiency-
dc.subject.keywordPlusEnergy gap-
dc.subject.keywordPlusGallium compounds-
dc.subject.keywordPlusMESFET devices-
dc.subject.keywordPlusMetals-
dc.subject.keywordPlusNanostructures-
dc.subject.keywordPlusSchottky barrier diodes-
dc.subject.keywordPlusStructural optimization-
dc.subject.keywordPlusThreshold voltage-
dc.subject.keywordPlusWide band gap semiconductors-
dc.subject.keywordPlusAsymmetric gates-
dc.subject.keywordPlusElectrical performance-
dc.subject.keywordPlusGallium oxides-
dc.subject.keywordPlusHigh frequency operation-
dc.subject.keywordPlusMetal oxide field effect transistors-
dc.subject.keywordPlusSchottky Barrier Diode(SBD)-
dc.subject.keywordPlusSchottky contact properties-
dc.subject.keywordPlusWide band-gap material-
dc.subject.keywordPlusTransistors-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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