Asymmetric Double-Gate β-Ga 2 O 3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
DC Field | Value | Language |
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dc.contributor.author | Ma, J. | - |
dc.contributor.author | Cho, H.J. | - |
dc.contributor.author | Heo, J. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Yoo, G. | - |
dc.date.available | 2019-04-19T02:30:02Z | - |
dc.date.created | 2019-04-19 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/34338 | - |
dc.description.abstract | The ultra-wide bandgap and cost-effective melt-growth of β-Ga 2 O 3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double-gate (ADG) β-Ga 2 O 3 nanomembrane field-effect transistor (FET) comprised of a bottom-gate (BG) metal-oxide field-effect transistor and a top-gate (TG) metal-semiconductor field-effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top-gate β-Ga 2 O 3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off-state breakdown measurement. These properties are further enhanced by double-gate operation, and superior device performance is demonstrated; positive-shifted threshold voltage and reduced subthreshold slope enable the asymmetric double-gate β-Ga 2 O 3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high-frequency operation. These results show the great potential of asymmetric double-gate β-Ga 2 O 3 FETs for energy-efficient high-voltage and -frequency devices with optimal material and structure co-designs. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Blackwell Publishing Ltd | - |
dc.relation.isPartOf | Advanced Electronic Materials | - |
dc.title | Asymmetric Double-Gate β-Ga 2 O 3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aelm.201800938 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Advanced Electronic Materials, v.5, no.6, pp.1800938 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000471049100020 | - |
dc.identifier.scopusid | 2-s2.0-85063728759 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1800938 | - |
dc.citation.title | Advanced Electronic Materials | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Yoo, G. | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | asymmetric-gate | - |
dc.subject.keywordAuthor | beta-gallium oxide | - |
dc.subject.keywordAuthor | metal-oxide field-effect transistor | - |
dc.subject.keywordAuthor | metal-semiconductor field-effect transistor | - |
dc.subject.keywordPlus | Cost effectiveness | - |
dc.subject.keywordPlus | Energy efficiency | - |
dc.subject.keywordPlus | Energy gap | - |
dc.subject.keywordPlus | Gallium compounds | - |
dc.subject.keywordPlus | MESFET devices | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Nanostructures | - |
dc.subject.keywordPlus | Schottky barrier diodes | - |
dc.subject.keywordPlus | Structural optimization | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Wide band gap semiconductors | - |
dc.subject.keywordPlus | Asymmetric gates | - |
dc.subject.keywordPlus | Electrical performance | - |
dc.subject.keywordPlus | Gallium oxides | - |
dc.subject.keywordPlus | High frequency operation | - |
dc.subject.keywordPlus | Metal oxide field effect transistors | - |
dc.subject.keywordPlus | Schottky Barrier Diode(SBD) | - |
dc.subject.keywordPlus | Schottky contact properties | - |
dc.subject.keywordPlus | Wide band-gap material | - |
dc.subject.keywordPlus | Transistors | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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