Effect of Al 2 O 3 Passivation on Electrical Properties of beta -Ga 2 O 3 Field-Effect Transistor
DC Field | Value | Language |
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dc.contributor.author | Ma, J. | - |
dc.contributor.author | Lee, O.J. | - |
dc.contributor.author | Yoo, G. | - |
dc.date.available | 2019-05-20T01:40:05Z | - |
dc.date.created | 2019-05-17 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/34726 | - |
dc.description.abstract | We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate β-Ga2O3 FET and its device applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Journal of the Electron Devices Society | - |
dc.title | Effect of Al 2 O 3 Passivation on Electrical Properties of beta -Ga 2 O 3 Field-Effect Transistor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JEDS.2019.2912186 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Journal of the Electron Devices Society, v.7, pp.512 - 516 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000467045100003 | - |
dc.identifier.scopusid | 2-s2.0-85065418625 | - |
dc.citation.endPage | 516 | - |
dc.citation.startPage | 512 | - |
dc.citation.title | IEEE Journal of the Electron Devices Society | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Yoo, G. | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | surface depletion | - |
dc.subject.keywordAuthor | Aluminum oxide | - |
dc.subject.keywordAuthor | Electric breakdown | - |
dc.subject.keywordAuthor | Field effect transistors | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordAuthor | Stress | - |
dc.subject.keywordAuthor | Surface depletion. | - |
dc.subject.keywordPlus | Alumina | - |
dc.subject.keywordPlus | Aluminum oxide | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Electric breakdown | - |
dc.subject.keywordPlus | Electric field effects | - |
dc.subject.keywordPlus | Gallium compounds | - |
dc.subject.keywordPlus | Passivation | - |
dc.subject.keywordPlus | Stresses | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Atomic layer deposited | - |
dc.subject.keywordPlus | Channel conductance | - |
dc.subject.keywordPlus | Device application | - |
dc.subject.keywordPlus | Gallium oxides | - |
dc.subject.keywordPlus | Off state breakdown characteristics | - |
dc.subject.keywordPlus | Physics-based | - |
dc.subject.keywordPlus | Surface depletion | - |
dc.subject.keywordPlus | Surface passivation | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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