Low Subthreshold Swing Double-Gate β-Ga2O3 Field-Effect Transistors with Polycrystalline Hafnium Oxide Dielectrics
- Authors
- Ma, J.; Yoo, G.
- Issue Date
- Aug-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- double-gate; hafnium oxide; β-Ga2O3
- Citation
- IEEE Electron Device Letters, v.40, no.8, pp.1317 - 1320
- Journal Title
- IEEE Electron Device Letters
- Volume
- 40
- Number
- 8
- Start Page
- 1317
- End Page
- 1320
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/35004
- DOI
- 10.1109/LED.2019.2924680
- ISSN
- 0741-3106
- Abstract
- We demonstrate low subthreshold swing (SS) double-gate (DG) β-Ga2O3 field-effect transistors (FETs) with polycrystalline hafnium oxide (HfO2) gate dielectrics. The atomic layer deposited HfO2 layer at an elevated temperature of 350 °C without post-deposition annealing has a polycrystalline structure. The threshold voltage is modulated from depletion-to enhancement-mode by independently controlled bottom-gate bias. The SS is reduced to as low as 64 mV/dec with mobility of 20 cm2/Vs while maintaining a high ON/OFF ratio of 107 and negligible hysteresis of 30 mV via double-gate operation. The device shows an ON/OFF ratio of 106 and the SS of 320 mV/dec up to an operating temperature of 250 °C and the OFF-state breakdown voltage of 355 V. The demonstrated DG β-Ga2O3 FETs with the polycrystalline HfO2 layer is a promising structure for energy efficient high temperature device and circuit applications. © 1980-2012 IEEE.
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