A 19.6 dB Input Power Range 403 MHz Rectifier Based on Quality Factor in Matching Technique
- Authors
- Au N.; Seo C.; Park K.; Hong S.
- Issue Date
- Jun-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- high frequency rectifiers; medical implant devices; quality factor; Schottky diode; Wireless power transmission
- Citation
- 2019 IEEE Wireless Power Transfer Conference, WPTC 2019, pp.587 - 590
- Journal Title
- 2019 IEEE Wireless Power Transfer Conference, WPTC 2019
- Start Page
- 587
- End Page
- 590
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/36228
- DOI
- 10.1109/WPTC45513.2019.9055538
- ISSN
- 0000-0000
- Abstract
- To extend the input power range and increase RF sensitivity for energy harvesting in medical implant communication service (MICS) band, a high quality (Q) matching network is applied in 403 MHz rectifier circuit. In this proposed design, a finite unload Q series inductor is placed between a pair of shunt capacitors to enhance the overall load Q factor of impedance matching network when compared with conventional type. By using lump components, the compact size of rectifier is 1.4 cm x 0.8 cm that suitable for medical implant devices in human body tissue. The compact-size rectifier has the measured efficiency (eta) where the input power range for eta above 50.1 % is from -8.1 dBm (RF sensitivity) to 11.5 dBm and thus, the input power range of 19.6 dB is achieved. At 5 dBm the peak efficiency is 68.1 %. © 2019 IEEE.
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