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Cited 2 time in webofscience Cited 3 time in scopus
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Accelerating Memory Access with Address Phase Skipping in LPDDR2-NVM

Authors
Park, JaehyunShin, DongwhaChang, NaehyuckLee, Hyung Gyu
Issue Date
Dec-2014
Publisher
대한전자공학회
Keywords
Phase-change memory; LPDDR2-NVM; main memory; address phase skipping; system-level implementation
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.14, no.6, pp.741 - 749
Journal Title
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Volume
14
Number
6
Start Page
741
End Page
749
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/39442
ISSN
1598-1657
Abstract
Low power double data rate 2 non-volatile memory (LPDDR2-NVM) has been deemed the standard interface to connect non-volatile memory devices such as phase-change memory (PCM) directly to the main memory bus. However, most of the previous literature does not consider or overlook this standard interface. In this paper, we propose address phase skipping by reforming the way of interfacing with LPDDR2-NVM. To verify effectiveness and functionality, we also develop a system-level prototype that includes our customized LPDDR2-NVM controller and commercial PCM devices. Extensive simulations and measurements demonstrate up to a 3.6% memory access time reduction for commercial PCM devices and a 31.7% reduction with optimistic parameters of the PCM research prototypes in industries.
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