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Block copolymer multiple patterning integrated with conventional ArF lithography
- Authors
- Park, Seung Hak; Shin, Dong Ok; Kim, Bong Hoon; Yoon, Dong Ki; Kim, Kyoungseon; Lee, Si Yong; Oh, Seok-Hwan; Choi, Seong-Woon; Jeon, Sang Chul; Kim, Sang Ouk
- Issue Date
- Jan-2010
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- SOFT MATTER, v.6, no.1, pp.120 - 125
- Journal Title
- SOFT MATTER
- Volume
- 6
- Number
- 1
- Start Page
- 120
- End Page
- 125
- ISSN
- 1744-683X
- Abstract
- We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.
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