Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate
- Authors
- Lee, Jong-Won; Ryu, Seong-Wan; Shin, Dong Ok; Kim, Bong Hoon; Kim, Sang Ouk; Choi, Yang-Kyu
- Issue Date
- Jun-2009
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nonvolatile memories (NVM); Nanocrystal (NC); Geometric effect; Block copolymer (BCP) nanotemplate; Modeling; Capacitive-coupling ratio
- Citation
- SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 53
- Number
- 6
- Start Page
- 640
- End Page
- 643
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/39523
- DOI
- 10.1016/j.sse.2009.03.007
- ISSN
- 0038-1101
- Abstract
- This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It Was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate. (C) 2009 Elsevier Ltd. All rights reserved.
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