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Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

Authors
Lee, Jong-WonRyu, Seong-WanShin, Dong OkKim, Bong HoonKim, Sang OukChoi, Yang-Kyu
Issue Date
Jun-2009
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
Nonvolatile memories (NVM); Nanocrystal (NC); Geometric effect; Block copolymer (BCP) nanotemplate; Modeling; Capacitive-coupling ratio
Citation
SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643
Journal Title
SOLID-STATE ELECTRONICS
Volume
53
Number
6
Start Page
640
End Page
643
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/39523
DOI
10.1016/j.sse.2009.03.007
ISSN
0038-1101
Abstract
This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It Was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate. (C) 2009 Elsevier Ltd. All rights reserved.
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