Selective-area heteroepitaxial growth of h-BN micropatterns on graphene layers
- Authors
- Yun, Jiyoung; Oh, Hongseok; Jo, Janghyun; Lee, Hyun Hwi; Kim, Miyoung; Yi, Gyu-Chul
- Issue Date
- Jan-2018
- Publisher
- IOP PUBLISHING LTD
- Keywords
- hexagonal boron nitride micropattern; graphene substrate; selective area epitaxial growth
- Citation
- 2D MATERIALS, v.5, no.1
- Journal Title
- 2D MATERIALS
- Volume
- 5
- Number
- 1
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/40493
- DOI
- 10.1088/2053-1583/aa97f6
- ISSN
- 2053-1583
- Abstract
- We report the selective-area heteroepitaxial growth of hexagonal boron nitride (h-BN) on graphene layers using catalyst-free chemical vapor deposition. For both catalyst-free and selective-area growth, exfoliated graphene layers were irradiated with a focused ion beam to generate nucleation sites on the inert graphene surface. A high-quality, ultrathin h-BN micropattern array was selectively grown only on the patterned region of graphene using borazine, ammonia, and nitrogen without any metal catalyst. The crystal structure and microstructural properties of h-BN grown on graphene were investigated using synchrotron radiation x-ray diffraction and transmission electron microscopy, respectively. The catalyst-free growth mechanism and heteroepitaxial relationship between h-BN and graphene layers are discussed.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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