Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets
- Authors
- Chung, Kunook; Oh, Hongseok; Jo, Janghyun; Lee, Keundong; Kim, Miyoung; Yi, Gyu-Chul
- Issue Date
- Jul-2017
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NPG ASIA MATERIALS, v.9
- Journal Title
- NPG ASIA MATERIALS
- Volume
- 9
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/40494
- DOI
- 10.1038/am.2017.118
- ISSN
- 1884-4049
- Abstract
- Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, the achievement of high-density crystal growths was a critical growth step because the sp(2)-bonded h-BN layers are known to be free of dangling bonds. Unlike GaN layers grown on a typical heterogeneous sapphire substrate, the morphological and microstructural results strongly suggest a high-density growth feature that is driven by the atomic cliffs inherent in the CVD-grown h-BN layers. More importantly, the GaN layers grown on CVD-grown h-BN exhibited a flat and continuous surface morphology with well-aligned crystal orientations both along the c-axis and in-plane, indicating the characteristics of GaN heteroepitaxy on h-BN.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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