Centimeter-sized epitaxial h-BN films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Hongseok | - |
dc.contributor.author | Jo, Janghyun | - |
dc.contributor.author | Tchoe, Youngbin | - |
dc.contributor.author | Yoon, Hosang | - |
dc.contributor.author | Lee, Hyun Hwi | - |
dc.contributor.author | Kim, Sung-Soo | - |
dc.contributor.author | Kim, Miyoung | - |
dc.contributor.author | Sohn, Byeong-Hyeok | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.available | 2021-03-08T02:40:19Z | - |
dc.date.created | 2021-03-08 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/40495 | - |
dc.description.abstract | We report the growth and transfer of centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films using Ni(111) single-crystal substrates. The h-BN films were heteroepitaxially grown on 10 x 10 mm(2) or 20 x 20 mm(2) Ni(111) substrates using atmospheric pressure chemical vapor deposition with a single ammonia-borane precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-used. A careful analysis of the growth parameters revealed that the crystallinity and area coverage of the h-BN films were mostly sensitive to the sublimation temperature of the ammonia-borane source. Moreover, various physical characterizations confirmed that the grown films exhibited the typical characteristics of hexagonal boron nitride layers over the entire area. Furthermore, the heteroepitaxial relationship between h-BN and Ni(111) and the overall crystallinity of the film were thoroughly investigated using a synchrotron radiation X-ray diffraction analysis including theta-2. scans, grazing incident diffraction, and reciprocal space mapping. The crystallinity at the microscopic scale was further investigated using transmission electron microscopy (TEM)-based techniques, including selective area electron diffraction pattern mapping, electron back-scattered diffraction, and high-resolution | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.relation.isPartOf | NPG ASIA MATERIALS | - |
dc.title | Centimeter-sized epitaxial h-BN films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/am.2016.178 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NPG ASIA MATERIALS, v.8 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000391939800004 | - |
dc.citation.title | NPG ASIA MATERIALS | - |
dc.citation.volume | 8 | - |
dc.contributor.affiliatedAuthor | Oh, Hongseok | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | CRYSTALLINE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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