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Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films

Authors
Lee, JongminKim, Gi-YeopJeong, SeyeopYang, MihyunKim, Jong-WooCho, Byeong-GwanChoi, YongseongKim, SangmoChoi, Jin SanLee, Tae KwonKim, JiwoongLee, Dong RyeolChang, Seo HyoungPark, SungkyunJung, Jong HoonBark, Chung WungKoo, Tae-YoungRyan, Philip J.Ihm, KyuwookKim, SanghoonChoi, Si-YoungKim, Tae HeonLee, Sanghan
Issue Date
17-Nov-2021
Publisher
AMER CHEMICAL SOC
Keywords
metal-to-insulator phase transition; template engineering; oxide; thin film; heteroepitaxy
Citation
ACS APPLIED MATERIALS & INTERFACES, v.13, no.45, pp.54466 - 54475
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
13
Number
45
Start Page
54466
End Page
54475
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/41795
DOI
10.1021/acsami.1c13675
ISSN
1944-8244
Abstract
Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.
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