Large-scale, single-oriented ZnO nanostructure on h-BN films for flexible inorganic UV sensors
- Authors
- Oh, Hongseok; Tchoe, Youngbin; Kim, Heehun; Yun, Jiyoung; Park, Mingi; Kim, Seongjun; Lim, Young-Soo; Kim, Hanjoon; Jang, Woosung; Hwang, Jaeyong; Song, Yeda; Koh, Juntae; Yi, Gyu-Chul
- Issue Date
- 14-Dec-2021
- Publisher
- AIP Publishing
- Citation
- JOURNAL OF APPLIED PHYSICS, v.130, no.22
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 130
- Number
- 22
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/41855
- DOI
- 10.1063/5.0067644
- ISSN
- 0021-8979
- Abstract
- We report the growth of large-scale, single-oriented zinc oxide (ZnO) nanowall networks on epitaxial hexagonal boron nitride (h-BN) films and their application to flexible inorganic ultraviolet (UV) light sensors. Using catalyst-free metal-organic vapor phase epitaxy, ZnO nanowall networks with good vertical alignment are grown on epitaxial h-BN films. The single-oriented crystal structure of the ZnO nanostructures on h-BN is investigated using x-ray diffraction (XRD) spectroscopy, and the heteroepitaxial relationship between ZnO and h-BN is revealed through synchrotron radiation XRD. Interestingly, when utilizing the grown ZnO nanostructure as a channel for UV sensors, better performance merits such as a high I-UV/I-dark ratio, faster recovery time, and low dark current are achieved if h-BN is employed as a growth template. As an example of inorganic flexible optoelectronic device applications, flexible UV sensors are fabricated using ZnO/h-BN heterostructures owing to the insulating and transferrable nature of h-BN substrates. The sensor maintained an excellent performance, even under highly bent conditions.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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