Highly Linear K-/Ka-Band SPDT Switch Based on Traveling-Wave Concept in a 150-nm GaN pHEMT Process
- Authors
- Kim, Taehun; Im, Hyemin; Lee, Suk-Hui; Kim, Ki-Jin; Park, Changkun
- Issue Date
- Aug-2022
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Switches; HEMTs; Loss measurement; Switching circuits; Insertion loss; Wireless communication; Logic gates; Gallium nitride (GaN); high linearity; millimeter-wave (mm-wave); single-pole double-throw (SPDT); switch; traveling-wave
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.32, no.8, pp.987 - 990
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 32
- Number
- 8
- Start Page
- 987
- End Page
- 990
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/42571
- DOI
- 10.1109/LMWC.2022.3161498
- ISSN
- 1531-1309
- Abstract
- This letter presents a highly linear 18-42 GHz single-pole double-throw (SPDT) switch based on the traveling-wave concept for 5G applications. An RF switch for 5G applications requires low insertion loss, high isolation, and high linearity in both Tx/Rx modes. To achieve wideband performance and high linearity, the traveling-wave concept and a 150-nm GaN high electron mobility transistor (HEMT) process were used. The equivalent circuit of the SPDT switch was analyzed using the S-parameter to suppress the loss and improve the isolation. The proposed SPDT switch operates with less than 2.0-dB of insertion loss and higher than 32.1-dB of isolation in a frequency range of 18-42 GHz, in both Tx/Rx modes. The measured input 1-dB compression point (IP $_{{1dB}})$ is 47.5-49.5 dBm at 26-30 GHz. The chip size of the proposed SPDT, including pads, is 3.7 x 0.51 mm(2).
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