Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors
- Authors
- Kang, Ha Young; Yeom, Min Jae; Yang, Jeong Yong; Choi, Yoonho; Lee, Jaeyong; Park, Changkun; Yoo, Geonwook; Chung, Roy Byung Kyu
- Issue Date
- Feb-2023
- Publisher
- ELSEVIER
- Keywords
- GaN HEMTs; & kappa; -Ga2O3; Spontaneous polarization; Channel resistance; Breakdown voltage
- Citation
- MATERIALS TODAY PHYSICS, v.31
- Journal Title
- MATERIALS TODAY PHYSICS
- Volume
- 31
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43393
- DOI
- 10.1016/j.mtphys.2023.101002
- ISSN
- 2542-5293
- Abstract
- GaN power technology, especially AlGaN/GaN high electron-mobility transistors (HEMTs), has made significant progress in recent years. However, the performance of HEMTs is still limited due to a trade-off between on -resistance and off-state breakdown voltage (BV). Integrating a polar gate dielectric with GaN HEMTs can potentially improve both sheet resistance of the two-dimensional electron gas channel and the field distribution between gate and drain. In this regard, orthorhombic kappa-Ga2O3 has attractive properties since it is predicted to be strongly polar and highly dielectric while it grows epitaxially on GaN. By successfully integrating crystalline kappa-Ga2O3 on GaN HEMTs, the channel sheet resistance is reduced by 20% from a reference device with amorphous Al2O3 gate dielectric. As a result, the cut-off frequency increases from 4.8 to 9.1 GHz. The dielectric property of kappa-Ga2O3 also improves BV from 354 to 380 V by reducing the peak electric field in the gate-drain region.
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