Heteroepitaxial alpha-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
DC Field | Value | Language |
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dc.contributor.author | Jeong, Yeong Je | - |
dc.contributor.author | Park, Ji-Hyeon | - |
dc.contributor.author | Yeom, Min Jae | - |
dc.contributor.author | Kang, Inho | - |
dc.contributor.author | Yang, Jeong Yong | - |
dc.contributor.author | Kim, Hyeong-Yun | - |
dc.contributor.author | Jeon, Dae-Woo | - |
dc.contributor.author | Yoo, Geonwook | - |
dc.date.accessioned | 2023-03-28T02:40:09Z | - |
dc.date.available | 2023-03-28T02:40:09Z | - |
dc.date.created | 2023-02-27 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43644 | - |
dc.description.abstract | Here, we report on heteroepitaxial alpha-Ga2O3 MOSFETs with a breakdown voltage (BV) of 2.3 kV at a specific on-resistance of 335 m omega cm(2). High-quality alpha-Ga2O3 layers were grown on a sapphire substrate via halide vapor-phase epitaxy (HVPE). A stack of Ti/Al/Ni/Au was used for the S/D electrode, exhibiting significantly reduced contact resistance as compared with a conventional Ti/Au stack. Consequently, the record BV and mobility of 20.4 cm(2) V-1 s(-1) were achieved. Moreover, a consistent critical field of 1 MV cm(-1) was obtained for variable L-GD. Our results are superior to recently reported heteroepitaxial alpha-/beta-Ga2O3 MOSFETs, which is promising toward HVPE alpha-Ga2O3 based power devices. (C) 2022 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.title | Heteroepitaxial alpha-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy | - |
dc.type | Article | - |
dc.identifier.doi | 10.35848/1882-0786/ac7431 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.15, no.7 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000808280100001 | - |
dc.identifier.scopusid | 2-s2.0-85132707519 | - |
dc.citation.number | 7 | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 15 | - |
dc.contributor.affiliatedAuthor | Yoo, Geonwook | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | alpha-Ga2O3 | - |
dc.subject.keywordAuthor | breakdown | - |
dc.subject.keywordAuthor | halide vapor-phase epitaxy | - |
dc.subject.keywordAuthor | hetero-epitaxy | - |
dc.subject.keywordAuthor | MOSFETs | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LATERAL BETA-GA2O3 MOSFETS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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