Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Heteroepitaxial alpha-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy

Full metadata record
DC Field Value Language
dc.contributor.authorJeong, Yeong Je-
dc.contributor.authorPark, Ji-Hyeon-
dc.contributor.authorYeom, Min Jae-
dc.contributor.authorKang, Inho-
dc.contributor.authorYang, Jeong Yong-
dc.contributor.authorKim, Hyeong-Yun-
dc.contributor.authorJeon, Dae-Woo-
dc.contributor.authorYoo, Geonwook-
dc.date.accessioned2023-03-28T02:40:09Z-
dc.date.available2023-03-28T02:40:09Z-
dc.date.created2023-02-27-
dc.date.issued2022-07-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43644-
dc.description.abstractHere, we report on heteroepitaxial alpha-Ga2O3 MOSFETs with a breakdown voltage (BV) of 2.3 kV at a specific on-resistance of 335 m omega cm(2). High-quality alpha-Ga2O3 layers were grown on a sapphire substrate via halide vapor-phase epitaxy (HVPE). A stack of Ti/Al/Ni/Au was used for the S/D electrode, exhibiting significantly reduced contact resistance as compared with a conventional Ti/Au stack. Consequently, the record BV and mobility of 20.4 cm(2) V-1 s(-1) were achieved. Moreover, a consistent critical field of 1 MV cm(-1) was obtained for variable L-GD. Our results are superior to recently reported heteroepitaxial alpha-/beta-Ga2O3 MOSFETs, which is promising toward HVPE alpha-Ga2O3 based power devices. (C) 2022 The Japan Society of Applied Physics-
dc.language영어-
dc.language.isoen-
dc.publisherIOP Publishing Ltd-
dc.relation.isPartOfAPPLIED PHYSICS EXPRESS-
dc.titleHeteroepitaxial alpha-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy-
dc.typeArticle-
dc.identifier.doi10.35848/1882-0786/ac7431-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS EXPRESS, v.15, no.7-
dc.description.journalClass1-
dc.identifier.wosid000808280100001-
dc.identifier.scopusid2-s2.0-85132707519-
dc.citation.number7-
dc.citation.titleAPPLIED PHYSICS EXPRESS-
dc.citation.volume15-
dc.contributor.affiliatedAuthorYoo, Geonwook-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.subject.keywordAuthoralpha-Ga2O3-
dc.subject.keywordAuthorbreakdown-
dc.subject.keywordAuthorhalide vapor-phase epitaxy-
dc.subject.keywordAuthorhetero-epitaxy-
dc.subject.keywordAuthorMOSFETs-
dc.subject.keywordAuthorcontact resistance-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusLATERAL BETA-GA2O3 MOSFETS-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Files in This Item
There are no files associated with this item.
Appears in
Collections
ETC > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Yoo, Geon wook photo

Yoo, Geon wook
College of Information Technology (Department of Electronic Engineering)
Read more

Altmetrics

Total Views & Downloads

BROWSE