IGZO thin-film transistors with tunneling contacts: towards power efficient display
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jaewon | - |
dc.contributor.author | Oh, Seunghyeon | - |
dc.contributor.author | Jo, Hyerin | - |
dc.contributor.author | Oh, Hongseok | - |
dc.date.accessioned | 2023-06-07T07:40:06Z | - |
dc.date.available | 2023-06-07T07:40:06Z | - |
dc.date.created | 2023-06-07 | - |
dc.date.issued | 2023-05 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43962 | - |
dc.description.abstract | We report the fabrication and characterization of indium gallium zinc oxide (IGZO) tunneling thin-film transistors. Both the IGZO channel and an Al2O3 tunneling barrier layer were deposited using the radio-frequency magnetron sputtering method. Compared with a conventional device, our device exhibited rapid saturation at a much smaller drain bias. Interestingly, we observed two different current saturation mechanisms within a single device, which can be explained as competition between the depletion envelope near the source electrode and channel depletion near the drain electrode. This work represents an industry-friendly method for implementing the tunnel-contact approach in the display industry. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.title | IGZO thin-film transistors with tunneling contacts: towards power efficient display | - |
dc.type | Article | - |
dc.identifier.doi | 10.35848/1882-0786/acd5a8 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.16, no.5 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000994002800001 | - |
dc.identifier.scopusid | 2-s2.0-85160248937 | - |
dc.citation.number | 5 | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | Oh, Hongseok | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | tunnel contact transistors | - |
dc.subject.keywordAuthor | source gated transistors | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | display | - |
dc.subject.keywordPlus | SOURCE-GATED TRANSISTORS | - |
dc.subject.keywordPlus | DEPOSITED ALUMINUM-OXIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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