Three-Stacked CMOS Power Amplifier to Increase Output Power With Stability Enhancement for mm-Wave Beamforming Systems
DC Field | Value | Language |
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dc.contributor.author | Jeong, Hayeon | - |
dc.contributor.author | Lee, Hui Dong | - |
dc.contributor.author | Park, Bonghyuk | - |
dc.contributor.author | Jang, Seunghyun | - |
dc.contributor.author | Kong, Sunwoo | - |
dc.contributor.author | Park, Changkun | - |
dc.date.accessioned | 2023-07-21T02:40:04Z | - |
dc.date.available | 2023-07-21T02:40:04Z | - |
dc.date.created | 2023-02-27 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/44129 | - |
dc.description.abstract | In this study, an mm-wave band complementary metal-oxide-semiconductor (CMOS) power amplifier (PA) with a two-stage differential structure was designed. An analysis of the designed PA is presented and a new structure is proposed to eliminate the possibility of oscillation in the PA, which has high gain and high output power. The designed driver stage consists of a pair of cascode amplifiers and can be advantageously applied in beamforming systems as the PA phase is converted to 0 degrees/180 degrees with the on/off of a common-gate (CG) bias voltage. The power stage was designed with a three-stacked structure to obtain a high output power. The stability was improved using RC and capacitive feedbacks in the power stage. We implemented the PA using the 65-nm RF CMOS process. The designed PA used supply voltages of 2.0 and 3.3 V for the driver and power stages, respectively, and its saturated output power was measured as 24.7 dBm at 22.0 GHz. In this case, P-1,P-dB was 20.6 dBm and the peak power added efficiency (PAE) was 26.0%. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.title | Three-Stacked CMOS Power Amplifier to Increase Output Power With Stability Enhancement for mm-Wave Beamforming Systems | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TMTT.2022.3228539 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.71, no.6, pp.2450 - 2464 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000903558400001 | - |
dc.identifier.scopusid | 2-s2.0-85146232785 | - |
dc.citation.endPage | 2464 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2450 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 71 | - |
dc.contributor.affiliatedAuthor | Park, Changkun | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9994629 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Complementary metal-oxide-semiconductor (CMOS) | - |
dc.subject.keywordAuthor | flexible access common spectrum (FACS) | - |
dc.subject.keywordAuthor | mm-Wave | - |
dc.subject.keywordAuthor | power amplifiers (PAs) | - |
dc.subject.keywordAuthor | stability | - |
dc.subject.keywordPlus | DESIGN | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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