Geometrical Doping at the Atomic Scale in Oxide Quantum Materials
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Minsu | - |
dc.contributor.author | Jeon, Hyunwoo | - |
dc.contributor.author | Eom, Kitae | - |
dc.contributor.author | Seo, Jinsol | - |
dc.contributor.author | Roh, Seulki | - |
dc.contributor.author | Seo, Ilwan | - |
dc.contributor.author | Oh, Sang Ho | - |
dc.contributor.author | Hwang, Jungseek | - |
dc.contributor.author | Lee, Yunsang | - |
dc.contributor.author | Pickett, Warren E. | - |
dc.contributor.author | Panagopoulos, Christos | - |
dc.contributor.author | Eom, Chang-Beom | - |
dc.contributor.author | Lee, Jaichan | - |
dc.date.accessioned | 2023-09-05T01:40:03Z | - |
dc.date.available | 2023-09-05T01:40:03Z | - |
dc.date.created | 2023-09-04 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/44231 | - |
dc.description.abstract | Chemical dopants enabling a plethora of emergent physicalpropertieshave been treated as randomly and uniformly distributed in the frameof a three-dimensional doped system. However, in nanostructured architectures,the location of dopants relative to the interface or boundary cangreatly influence device performance. This observation suggests thatchemical dopants need to be considered as discrete defects, meaningthat geometric control of chemical dopants becomes a critical aspectas the physical size of materials scales down into the nanotechnologyregime. Here we show that geometrical control of dopants at the atomicscale is another fundamental parameter in chemical doping, extendingbeyond the kind and amount of dopants conventionally used. The geometricalcontrol of dopants extends the class of geometrically controlled structuresinto an unexplored dimensionality, between 2D and 3D. It is well understoodthat in the middle of the progressive dimensionality change from 3Dto 2D, the electronic state of doped SrTiO3 is alteredfrom a highly symmetric charged fluid to a charge disproportionatedinsulating state. Our results introduce a geometrical control of dopants,namely, geometrical doping, as another axis to provide a variety ofemergent electronic states via tuning of the electronic propertiesof the solid state. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS NANO | - |
dc.title | Geometrical Doping at the Atomic Scale in Oxide Quantum Materials | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsnano.3c03038 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS NANO, v.17, no.15, pp.14814 - 14821 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 001037642800001 | - |
dc.identifier.scopusid | 2-s2.0-85167471515 | - |
dc.citation.endPage | 14821 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 14814 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Lee, Yunsang | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsnano.3c03038 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | chemical doping | - |
dc.subject.keywordAuthor | atomic scale | - |
dc.subject.keywordAuthor | oxide | - |
dc.subject.keywordAuthor | metal-insulator transition | - |
dc.subject.keywordAuthor | SrTiO3 | - |
dc.subject.keywordPlus | INSULATOR-METAL TRANSITION | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | DOPANTS | - |
dc.subject.keywordPlus | PHYSICS | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.