Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructuresopen access
- Authors
- Eom, Jaeun; Lee, In Hak; Kee, Jung Yun; Cho, Minhyun; Seo, Jeongdae; Suh, Hoyoung; Choi, Hyung-Jin; Sim, Yumin; Chen, Shuzhang; Chang, Hye Jung; Baek, Seung-Hyub; Petrovic, Cedomir; Ryu, Hyejin; Jang, Chaun; Kim, Young Duck; Yang, Chan-Ho; Seong, Maeng-Je; Lee, Jin Hong; Park, Se Young; Choi, Jun Woo
- Issue Date
- Sep-2023
- Publisher
- NATURE PORTFOLIO
- Citation
- NATURE COMMUNICATIONS, v.14, no.1
- Journal Title
- NATURE COMMUNICATIONS
- Volume
- 14
- Number
- 1
- URI
- https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/44539
- DOI
- 10.1038/s41467-023-41382-8
- ISSN
- 2041-1723
- Abstract
- We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3 . It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
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