Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory

Full metadata record
DC Field Value Language
dc.contributor.authorNguyen, Thien An-
dc.contributor.authorLee, Jaejin-
dc.date.accessioned2023-12-01T05:40:08Z-
dc.date.available2023-12-01T05:40:08Z-
dc.date.created2023-12-01-
dc.date.issued2023-10-
dc.identifier.issn2169-3536-
dc.identifier.urihttps://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/44645-
dc.description.abstractSpin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM). However, STT-MRAM faces challenges due to process variations and thermal fluctuations, resulting in independent errors during the writing and reading. The STT-MRAM systems employ encoder and decoder mechanisms to address these errors. In addition, to handle asymmetric write error probabilities, a sparse code approach was adopted. Here, we propose an innovative algorithm based on the Hamming code to encode a sparse code with a minimum Hamming distance (MHD) of three. Our encoder introduces a general method to directly generate sparse code with an MHD of three from the user data. Before multiplying the data vectors by the generator matrix, we preprocessed them using an inverse method to ensure that the output of the generator matrix remained sparse. Furthermore, by leveraging the sum-product and syndrome decoding algorithms, we designed decoders that complemented the encoder. The simulation results showed that our proposed model could improve the speed and performance of STT-MRAM devices while overcoming the complexity issue of previous studies.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.relation.isPartOfIEEE ACCESS-
dc.titleSparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory-
dc.typeArticle-
dc.identifier.doi10.1109/ACCESS.2023.3324255-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE ACCESS, v.11, pp.114071 - 114079-
dc.description.journalClass1-
dc.identifier.wosid001092091900001-
dc.identifier.scopusid2-s2.0-85174822729-
dc.citation.endPage114079-
dc.citation.startPage114071-
dc.citation.titleIEEE ACCESS-
dc.citation.volume11-
dc.contributor.affiliatedAuthorLee, Jaejin-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/10283818/-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.subject.keywordAuthorAsymmetric write error rate-
dc.subject.keywordAuthorcascaded channel-
dc.subject.keywordAuthorerror correction codes (ECCs)-
dc.subject.keywordAuthorHamming code-
dc.subject.keywordAuthornon-volatile RAM-
dc.subject.keywordAuthorsparse codes-
dc.subject.keywordAuthorspin-torque transfer magnetic random access memory (STT-MRAM)-
dc.subject.keywordPlusSTT MRAM-
dc.subject.keywordPlusRAM-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusCIRCUIT-
dc.relation.journalResearchAreaComputer Science-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaTelecommunications-
dc.relation.journalWebOfScienceCategoryComputer Science, Information Systems-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryTelecommunications-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Files in This Item
Go to Link
Appears in
Collections
ETC > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Lee, Jae jin photo

Lee, Jae jin
College of Information Technology (Department of Electronic Engineering)
Read more

Altmetrics

Total Views & Downloads

BROWSE