Numerical self-consistent field calculation of a ferromagnetic ZnMnO quantum well

Abstract

The magnetic properties of a p-type ZnMnO diluted magnetic semiconductor quantum well are investigated by a numerical self-consistent field calculation taking into account the spin-exchange interaction between free carriers and magnetic impurities and the carrier exchange-correlation interaction based on the mean field theory of carrier-induced ferromagnetism. The dependence of the carrier spin polarization on magnetic impurity density and the spin-exchange interaction energy is presented in comparison with well-known III-V-based diluted magnetic semiconductors. The results show that room temperature operation of ZnMnO-based spin devices is probably easier than that of any other materials investigated with the same numerical method.