Curie-temperature modulation by electric fields in Mn delta-doped asymmetric double quantum wells
- Authors
- Kim, N; Lee, SJ; Kang, TW; Kim, H
- Issue Date
- Mar-2004
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.69, no.11
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 69
- Number
- 11
- URI
- https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/48923
- DOI
- 10.1103/PhysRevB.69.115308
- ISSN
- 2469-9950
2469-9969
- Abstract
- We present an investigation of the Curie temperature (T-c) modulation in semiconductor quantum wells. The combined effects of applied electric fields and p-type doping are considered for a system that consists of a Mn delta-doped well, a barrier, and a p-type-doped well. The amount of supplied holes from the p-type-doped well to the Mn delta-doped well is controlled by the applied electric fields. We calculate the change in the envelope functions of carriers at the lowest-energy subband resulting from applied electric fields. By applying 1.5 meV/nm electric fields, we can enhance T-c up to 8 times than that without the fields. The ferromagnetic transition temperature strongly depends on a position of the Mn delta-doped layer and asymmetry of quantum wells.
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