A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact
DC Field | Value | Language |
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dc.contributor.author | Oh, Seung Yoon | - |
dc.contributor.author | Jeong, Yeong Je | - |
dc.contributor.author | Kang, Inho | - |
dc.contributor.author | Park, Ji-Hyeon | - |
dc.contributor.author | Yeom, Min Jae | - |
dc.contributor.author | Jeon, Dae-Woo | - |
dc.contributor.author | Yoo, Geonwook | - |
dc.date.accessioned | 2024-02-22T02:00:20Z | - |
dc.date.available | 2024-02-22T02:00:20Z | - |
dc.date.issued | 2024-01 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/49189 | - |
dc.description.abstract | Among various polymorphic phases of gallium oxide (Ga2O3), alpha-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate alpha-Ga2O3 MOSFETs with hybrid Schottky drain (HSD) contact, comprising both Ohmic and Schottky electrode regions. In comparison with conventional Ohmic drain (OD) contact, a lower on-resistance (R-on) of 2.1 k Omega mm is achieved for variable channel lengths. Physics-based TCAD simulation is performed to validate the turn-on characteristics of the Schottky electrode region and the improved R-on. Electric-field analysis in the off-state is conducted for both the OD and HSD devices. Furthermore, a record breakdown voltage (BV) of 2.8 kV is achieved, which is superior to the 1.7 kV of the compared OD device. Our results show that the proposed HSD contact with a further optimized design can be a promising drain electrode scheme for alpha-Ga2O3 power MOSFETs. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI | - |
dc.title | A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/mi15010133 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.15, no.1 | - |
dc.identifier.wosid | 001152801000001 | - |
dc.identifier.scopusid | 2-s2.0-85183322635 | - |
dc.citation.number | 1 | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 15 | - |
dc.identifier.url | https://www.mdpi.com/2072-666X/15/1/133 | - |
dc.publisher.location | 스위스 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordAuthor | alpha-Ga2O3 | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | hybrid Schottky drain | - |
dc.subject.keywordAuthor | Ohmic drain | - |
dc.subject.keywordAuthor | breakdown voltage | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | BETA-GA2O3 | - |
dc.subject.keywordPlus | GA2O3 | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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